SPECIFICATIONCL(IDD)22 cyclesRow Cycle Time (tRCmin)45.75ns(min.)Refresh to Active /Refresh Command Time (tRFCmin)350ns(min.)Row Active Time (tRASmin)32ns(min.)UL Rating94 V - 0Operating Temperature0C to +86CStorage Temperature-55C to +100CFEATURESPower Su
| CL(IDD) | 22 cycles |
| Row Cycle Time (tRCmin) | 45.75ns(min.) |
| Refresh to Active /Refresh Command Time (tRFCmin) | 350ns(min.) |
| Row Active Time (tRASmin) | 32ns(min.) |
| UL Rating | 94 V – 0 |
| Operating Temperature | 0C to +86C |
| Storage Temperature | -55C to +100C |
| Power Supply: VDD = 1.2V Typical |
| VDDQ = 1.2V Typical |
| VPP = 2.5V Typical |
| VDDSPD = 2.2V to 3.6V |
| Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals |
| Low-power auto self refresh (LPASR) |
| Data bus inversion (DBI) for data bus |
| On-die VREFDQ generation and calibration |
| Dual-rank |
| On-board I2 serial presence-detect (SPD) EEPROM |
| 16 internal banks; 4 groups of 4 banks each |
| Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS) |
| Selectable BC4 or BL8 on-the-fly (OTF) |
| Fly-by topology |
| Terminated control command and address bus |
| PCB: Height 1.18 (30.00mm) |
| RoHS Compliant and Halogen-Free |
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